IndiumV3, Russie, Analysis, bibRecord, 000303

Optical mixing in GaAs/InGaAs/InGaP butt-joint diode lasers : New scheme for the sum-and difference-frequency generation

Identifieur interne : 000303 ( Russie/Analysis ); précédent : 000302; suivant : 000304

Optical mixing in GaAs/InGaAs/InGaP butt-joint diode lasers : New scheme for the sum-and difference-frequency generation

Auteurs : RBID : Pascal:07-0346465

Descripteurs français

Pascal (Inist)
- Laser semiconducteur, Diode laser, Fréquence différence, Fréquence somme, Température ambiante, Gallium arséniure, Indium arséniure, Harmonique 2, InGaAs/GaAs, InGaP, 4255P.

English descriptors

KwdEn :
- Ambient temperature, Difference frequency, Gallium arsenides, Indium arsenides, Laser diodes, Second harmonic, Semiconductor lasers, Sum frequency.

Abstract

Butt-joint diode lasers for the efficient nonlinear optical mixing in semiconductors are suggested and successfully implemented. First experimental demonstration of the sum-frequency and second-harmonic continuous-wave room-temperature generation in the InGaAs/GaAs/InGaP butt-joint diode lasers in the edge-emitting geometry is reported. Specific features of the butt-joint device, where two butt-joined diode lasers are optically coupled but injection pumped separately, are investigated and the prospects of the difference-frequency (far-infrared) generation are outlined.

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Links to Exploration step

Pascal:07-0346465

Le document en format XML

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<front><div type="abstract" xml:lang="en">Butt-joint diode lasers for the efficient nonlinear optical mixing in semiconductors are suggested and successfully implemented. First experimental demonstration of the sum-frequency and second-harmonic continuous-wave room-temperature generation in the InGaAs/GaAs/InGaP butt-joint diode lasers in the edge-emitting geometry is reported. Specific features of the butt-joint device, where two butt-joined diode lasers are optically coupled but injection pumped separately, are investigated and the prospects of the difference-frequency (far-infrared) generation are outlined.</div>
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Optical mixing in GaAs/InGaAs/InGaP butt-joint diode lasers : New scheme for the sum-and difference-frequency generation

Optical mixing in GaAs/InGaAs/InGaP butt-joint diode lasers : New scheme for the sum-and difference-frequency generation

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri